Fullerene-structured nanowires of silicon
Fullerene-structured nanowires of silicon
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DOI：
10.1103/physrevb.60.11593
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发表时间：
1999-10
影响因子：
3.7
通讯作者：
B. Marsen;K. Sattler
中科院分区：
文献类型：
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作者：
B. Marsen;K. Sattler
硅蒸气从磁控溅射源沉积到高度取向的热解石墨，导致在纳米线的形成。通过扫描隧道显微镜分析了结构。所述线的直径为3至7 nm，并且至少100 nm长。它们倾向于平行地组装成束。为了理解所观察到的准一维结构，类金刚石和类富勒烯线模型的构建。分子轨道计算得到了这种结构的结合能和带隙，并引导我们提出了一种基于富勒烯型${\mathrm{Si}}_{24}$的硅纳米线原子构型。
Silicon vapor from a magnetron sputter source was deposited onto highly oriented pyrolytic graphite, resulting in the formation of nanoscale wires. The structures were analyzed by scanning tunneling microscopy. The wires are from 3 to 7 nm in diameter and at least 100 nm long. They tend to be assembled parallel in bundles. In order to understand the observed quasi-one-dimensional structures, diamondlike and fullerenelike wire models are constructed. Molecular-orbit calculations yield binding energies and band gaps of such structures, and lead us to propose a fullerene-type ${\mathrm{Si}}_{24}$-based atomic configuration for nanowires of silicon.