Observation of chiral surface states in the integer quantum Hall effect
Observation of chiral surface states in the integer quantum Hall effect
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DOI：
10.1103/physrevlett.80.365
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发表时间：
1998-01-12
影响因子：
8.6
通讯作者：
Gossard, AC
中科院分区：
文献类型：
--
作者：
Druist, DP;Turley, PJ;Gossard, AC
我们在层状三维半导体结构中进行了低温、强磁场电子输运的实验研究。在产生与层平行传输的整数量子霍尔效应的场中，我们发现垂直电导G（zz）的深度极小值。在这些量子霍尔态之间，G（zz）的大小依赖性表明垂直输运是通过体的。在量子霍尔态中，我们发现垂直输运沿着样品表面，通过扩展表面态的“护套”。这种表面护套是一种新型的二维系统，其金属电导率远低于e(2)/h。
We have made experimental studies of low-temperature, high-magnetic field electronic transport in layered, three-dimensional semiconductor structures. In fields that produce the integer quantum Hall effect for transport parallel to the layers, we find deep minima in the vertical conductance G(zz). Between these quantum Hall states, the size dependence of G(zz) indicates that vertical transport is through the bulk. Within quantum Hall states, we find that vertical transport is along the surface of the sample, via a "sheath" of extended surface states. This surface sheath is a novel two-dimensional system that exhibits a metallic conductivity much less than e(2)/h.