Growth and characterizations of semipolar (112¯2) InN
Growth and characterizations of semipolar (112¯2) InN
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半极性 (112´2) InN 的生长和表征
DOI：
10.1063/1.4733997
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发表时间：
2012
影响因子：
3.2
通讯作者：
A. Szczepanska
中科院分区：
文献类型：
--
作者：
D. V. Dinh;D. Skuridina;S. Solopow;M. Frentrup;M. Pristovsek;P. Vogt;M. Kneissl;F. Ivaldi;S. Kret;A. Szczepanska
我们报道了在m平面（101¯0）蓝宝石衬底上（112¯2）GaN模板上（112¯2）的（112¯2）InN的金属有机气相外延生长。（112¯2）InN样本的面内关系为[1¯1¯23]InN||[0001]蓝宝石和[11¯00]InN||[12¯10]蓝宝石，复制了（112¯2）GaN模板的面内关系。（112¯2）InN样品和（112¯2）GaN模板的表面沿[11¯00]InN，GaN呈现波动，这归因于（112¯2）表面上铟/镓原子的各向异性扩散。与c平面（0001）InN相比，（112¯2）InN层的生长速度低3-4倍。高分辨率透射电镜显示（112¯2）InN层与（112¯2）GaN模板之间的界面松弛，与x射线衍射结果一致。在（112¯2）GaN模板中发现了基面堆叠缺陷，但由于沿整个InN/GaN界面存在错配位错，它们在InN/(112¯2)GaN界面处终止。不合群的人……
We report on metal-organic vapor phase epitaxial growth of (112¯2) InN on (112¯2) GaN templates on m-plane (101¯0) sapphire substrates. The in-plane relationship of the (112¯2) InN samples is [1¯1¯23]InN||[0001]sapphire and [11¯00]InN||[12¯10]sapphire, replicating the in-plane relationship of the (112¯2) GaN templates. The surface of the (112¯2) InN samples and the (112¯2) GaN templates shows an undulation along [11¯00]InN,GaN, which is attributed to anisotropic diffusion of indium/gallium atoms on the (112¯2) surfaces. The growth rate of the (112¯2) InN layers was 3-4 times lower compared to c-plane (0001) InN. High resolution transmission electron microscopy showed a relaxed interface between the (112¯2) InN layers and the (112¯2) GaN templates, consistent with x-ray diffraction results. Basal plane stacking faults were found in the (112¯2) GaN templates but they were terminated at the InN/(112¯2) GaN interface due to the presence of misfit dislocations along the entire InN/GaN interface. The misfit dis...