Silver-induced layer exchange for polycrystalline germanium on a flexible plastic substrate
Silver-induced layer exchange for polycrystalline germanium on a flexible plastic substrate
复制标题
柔性塑料基板上银诱导的多晶锗层交换
DOI：
--
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
T. Suemasu
中科院分区：
文献类型：
--
作者：
R. Yoshimine;K. Toko;N. Saitoh;N. Yoshizawa;T. Suemasu
通过Ag和非晶Ge层之间的层交换，直接在柔性塑料上实现了结晶Ge。层交换的关键因素是通过降低生长温度（250℃）和控制Ag和Ge之间的中间层（1纳米厚的SiO2）条件来限制Ag向Ge的扩散。与传统的固相结晶和铝诱导的层交换相比，使用 Ag 的层交换提供了更快的 Ge 成核和横向生长速率。从金属和半导体的扩散和溶解度的角度提出了层交换材料的确定原则。
Crystalline Ge was directly achieved on a flexible plastic by layer exchange between Ag and amorphous Ge layers. The key factor for the layer exchange was limiting the diffusion of Ag to Ge by lowering the growth temperature (250 °C) and controlling the condition of an interlayer (1-nm-thick SiO2) between Ag and Ge. The layer exchange using Ag provided much faster nucleation and lateral growth rates of Ge compared with the conventional solid-phase crystallization and Al-induced layer exchange. A principle to determine the materials for layer exchange is proposed from the perspective of the diffusion and solubility of metals and semiconductors.