Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers
Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers
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DOI：
10.1021/nl500515q
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发表时间：
2014-06-01
期刊：
影响因子：
10.8
通讯作者：
Wu, Junqiao
中科院分区：
文献类型：
--
作者：
Tongay, Sefaattin;Fan, Wen;Wu, Junqiao
不同单层过渡金属二硫属化物之间的能带偏移有望有效地分离电荷载流子或整流电荷流，为设计原子薄器件和探测奇异的二维物理提供机制。然而，开发这种大面积异质结构受到单层合成和有效耦合相邻层的挑战的阻碍。在这里，我们展示了CVD生长的WS2和MoS2单层的大面积（>数十微米）异质结构，其中层间相互作用从非耦合到强耦合进行了外部调谐。遵循这一趋势，异质结构的发光光谱从添加剂线分布演变，其中每个层独立地贡献于由WS2和MoS2层之间的电荷转移和能带归一化决定的新分布。这些结果和发现为创造具有丰富功能和新颖物理效果的新材料系统开辟了道路。
Band offsets between different monolayer transition metal dichalcogenides are expected to efficiently separate charge carriers or rectify charge flow, offering a mechanism for designing atomically thin devices and probing exotic two-dimensional physics. However, developing such large-area heterostructures has been hampered by challenges in synthesis of monolayers and effectively coupling neighboring layers. Here, we demonstrate large-area (>tens of micrometers) heterostructures of CVD-grown WS2, and MoS2 monolayers, where the interlayer interaction is externally tuned from noncoupling to strong coupling. Following this trend, the luminescence spectrum of the heterostructures evolves from an additive line profile where each layer contributes independently to a new profile that is dictated by charge transfer and band normalization between the WS2 and MoS2 layers. These results and findings open up venues to creating new material systems with rich functionalities and novel physical effects.