Stability investigations of inverted organic solar cells with a sol-gel processed ZnSrO or ZnBaO electron extraction layer
Stability investigations of inverted organic solar cells with a sol-gel processed ZnSrO or ZnBaO electron extraction layer
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具有溶胶-凝胶处理的 ZnSrO 或 ZnBaO 电子提取层的倒置有机太阳能电池的稳定性研究
DOI：
10.1117/12.2023247
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Pachoumi O
中科院分区：
文献类型：
--
作者：
Pachoumi O
有机光伏器件的稳定性是其商业化的一个限制因素，仍然是一个重大挑战，而电力转换效率现在正在达到最低要求。倒置有机太阳能电池结构显示出显著提高电池工作寿命的潜力，然而，当溶液处理的氧化锌用作电子提取层(EEL)时，在器件达到非永久性的最大性能之前，通常需要进行光浸泡步骤。通过溶胶-凝胶法在氧化锌中掺入锶或钡，避免了光浸泡的步骤。在模型聚[3-己基噻吩基]：[6，6]-苯基C_(60)丁酸甲酯(PCBM)体系中，我们得到了ZnSrO或ZnBaO电致发光材料紫外光照射前EQE的55%，而未掺杂的氧化锌鳗鱼的EQE为10%。我们通过比较掺杂和未掺杂的氧化锌对紫外光的响应，探讨了这一改善的原因。表征包括薄膜的电导率和x射线光电子能谱研究、电流-电压实验和用于探测器件内置场的电吸收(EA)光谱。我们将讨论所获得的结果，特别是掺杂的氧化锌器件(1.5V)比氧化锌器件(0.5V)具有更高的有效内置场，这将有助于解释掺锶和掺杂氧化锌改善器件性能的机制。
Stability of organic photovoltaic devices is a limiting factor for their commercialization and still remains a major challenge whilst power conversion efficiencies are now reaching the minimum requirements. The inverted organic solar cell architecture shows promising potential for improving significantly the cells working lifetime however, often when solution processed ZnO is used as electron extraction layer (EEL), a light soaking step is required before the device reaches a non-permanent maximum performance. Here we show that by doping ZnO with Sr or Ba using sol-gel processing the light-soaking step is circumvented. In a model poly [3-hexylthiophene] (P3HT): [6, 6]-Phenyl C60 butyl acid methyl ester (PCBM) system we obtain EQE 55% before UV exposure for ZnSrO or ZnBaO EELs as compared to 10% for undoped ZnO EEL. We have investigated the origin of this improvement by comparing the response to UV light of doped and undoped ZnO. Characterization includes electrical conductivity and x-ray photoemission spectroscopy studies on thin films, current-voltage experiments and electroabsorption (EA) spectroscopy to probe the built-in field in the devices. We will discuss how the results obtained and in particular the higher effective built-in field in doped ZnO devices (1.5V) compared to a ZnO device (0.5V) can help interpret the mechanism behind the device performance improvement with Sr and Ba doping of ZnO.