On the compensation mechanism in high‐resistivity 6H–SiC doped with vanadium
On the compensation mechanism in high‐resistivity 6H–SiC doped with vanadium
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DOI：
10.1063/1.359899
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发表时间：
1995-09
影响因子：
3.2
通讯作者：
J. R. Jenny;M. Skowronski;W. Mitchel;H. M. Hobgood;R. Glass;G. Augustine;R. Hopkins
中科院分区：
文献类型：
--
作者：
J. R. Jenny;M. Skowronski;W. Mitchel;H. M. Hobgood;R. Glass;G. Augustine;R. Hopkins
提出了一个模型，该模型描述了通过钒掺杂产生半绝缘6H碳化硅的补偿机制。通过物理气相传输法生长的未掺杂6H-SiC晶体通常含有1 × 1017和5 × 1018 cm − 3之间的未补偿硼受体。在添加钒时，钒供体的3d1电子补偿硼中心的空穴。结果表明，当钒的浓度大于硼的浓度时，费米能级被钉扎到钒施主能级。从温度依赖的霍尔效应测量，这个施主能级已被确定为驻留在导带最小值以下1.35 eV。对V掺杂SiC晶体的热刺激电流测量表明，硼是钒杂质的主要补偿中心。
A model is presented which describes the compensation mechanism resulting in semi‐insulating 6H silicon carbide by vanadium doping. Undoped 6H–SiC crystals grown by physical vapor transport methods frequently contain between 1×1017 and 5×1018 cm−3 uncompensated boron acceptors. Upon addition of vanadium, the 3d1 electron of the vanadium donor compensates the holes of the boron centers. It is shown that when vanadium is present in concentrations greater than that of boron, the Fermi level is pinned to the vanadium donor level. From temperature dependent Hall effect measurements, this donor level has been determined to reside 1.35 eV below the conduction band minimum. Thermally stimulated current measurements on V‐doped SiC crystals show that boron is the major compensating center for the vanadium impurity.