Erasable electrostatic lithography for quantum components
Erasable electrostatic lithography for quantum components
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DOI：
10.1038/nature01841
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发表时间：
2003-08-14
期刊：
影响因子：
64.8
通讯作者：
Ritchie, DA
中科院分区：
文献类型：
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作者：
Crook, R;Graham, AC;Ritchie, DA
量子电子元件(1,2)-如量子反点和一维通道-通常是通过电子束光刻或导电原子力显微镜的局部氧化从掺杂的GaAs/AlGaAs异质结构中定义的（3,4）。在这两种情况下，光刻和测量都是在非常不同的环境中进行的，因此制造和测试周期可能需要数周时间。在这里，我们描述了一种不同的光刻技术，我们称之为可擦静电光刻（EEL），其中在用于测量的相同低温高真空环境中，使用负偏置扫描探针在器件表面绘制电荷模式。电荷模式从地下二维电子系统（2DES）局部消耗电子来定义工作量子元件。电荷模式被局部擦除与扫描探头偏置正或全局用红光照亮装置。我们通过绘制和擦除量子反点来演示和研究EEL，然后开发了绘制和调谐高质量一维通道的技术（5,6）。量子组分使用扫描门显微镜成像（7-11）。以前曾报道过一种类似于EEL的技术，在电荷积累成像之前，使用尖端诱导的表面或供体层充电来局部扰动2DES（12）。
Quantum electronic components(1,2)-such as quantum antidots and one-dimensional channels-are usually defined from doped GaAs/AlGaAs heterostructures using electron-beam lithography or local oxidation by conductive atomic force microscopy(3,4). In both cases, lithography and measurement are performed in very different environments, so fabrication and test cycles can take several weeks. Here we describe a different lithographic technique, which we call erasable electrostatic lithography (EEL), where patterns of charge are drawn on the device surface with a negatively biased scanning probe in the same low-temperature high-vacuum environment used for measurement. The charge patterns locally deplete electrons from a subsurface two-dimensional electron system (2DES) to define working quantum components. Charge patterns are erased locally with the scanning probe biased positive or globally by illuminating the device with red light. We demonstrate and investigate EEL by drawing and erasing quantum antidots, then develop the technique to draw and tune high-quality one-dimensional channels(5,6). The quantum components are imaged using scanned gate microscopy(7-11).A technique similar to EEL has been reported previously, where tip-induced charging of the surface or donor layer was used to locally perturb a 2DES before charge accumulation imaging(12).