Stress evolution during metalorganic chemical vapor deposition of GaN
Stress evolution during metalorganic chemical vapor deposition of GaN
复制标题
DOI：
10.1063/1.123070
复制
发表时间：
1999-01-18
影响因子：
4
通讯作者：
Tsong, IST
中科院分区：
文献类型：
--
作者：
Hearne, S;Chason, E;Tsong, IST
在金属有机化学气相沉积过程中，可以实时测量蓝宝石上氮化镓薄膜的应力演变。尽管 GaN 与蓝宝石存在 16% 的压缩晶格失配，但我们发现 GaN 在 1050 摄氏度的张力下持续生长。此外，原位应力监测表明，在退火或热循环过程中没有可测量到的拉伸生长应力松弛。 (C) 1999 年美国物理研究所。 [S0003-6951(99)04603-3]。
The evolution of stress in gallium nitride films on sapphire has been measured in real time during metalorganic chemical vapor deposition. In spite of the 16% compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in tension at 1050 degrees C. Furthermore, in situ stress monitoring indicates that there is no measurable relaxation of the tensile growth stress during annealing or thermal cycling. (C) 1999 American Institute of Physics. [S0003-6951(99)04603-3].