Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C
Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C
复制标题
Cat-掺杂：80°C 晶体硅中磷和硼浅掺杂的新方法
DOI：
--
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
K. Ohdaira
中科院分区：
文献类型：
--
作者：
H. Matsumura;T. Hayakawa;Tatsunori Ohta;Yuki Nakashima;M. Miyamoto;T. Thi;K. Kôyama;K. Ohdaira
磷（P）或硼（B）原子可以在低至80至350 ℃的温度下掺杂，此时晶体硅（c-Si）仅暴露于通过膦（PH 3）或乙硼烷（B2 H6）与加热的钨（W）催化剂的催化裂化反应产生的物质几分钟。本文对这种新的掺杂方法--催化剂掺杂进行了系统的研究。采用基于霍尔效应测量的货车范德堡方法研究了P或B掺杂层的电学性质。二次离子质谱主要从样品背面观察c-Si中P或B原子的分布，以消除撞击效应。证实了p型c-Si的表面在80 °C下通过P Cat掺杂转变为n型，并且类似地，n型c-Si的表面通过B Cat掺杂转变为p型。掺杂深度浅至5 nm或更小，并且对于P和B掺杂，电激活掺杂浓度为1018至1019 cm-3。同时还发现，c-Si的表面电位是由晶体生长过程控制的。
Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH3) or diborane (B2H6) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 1018 to 1019 cm-3 for both P and B doping. It is also found that the surface potential of c-Si is controll...