Electrical controlled magnetism in FePt film with the coexistence of two phases
Electrical controlled magnetism in FePt film with the coexistence of two phases
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DOI：
10.1063/1.4913616
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发表时间：
2015-02
影响因子：
4
通讯作者：
Yue-tao Yang;J. Wen;Y. Xiong;L. Ma;L. Lv;Q. Cao;Dunhui Wang;Youwei Du
中科院分区：
文献类型：
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作者：
Yue-tao Yang;J. Wen;Y. Xiong;L. Ma;L. Lv;Q. Cao;Dunhui Wang;Youwei Du
在Pb(Mg1/3Nb2/3)O_3-PbTiO_3衬底上制备了一系列不同磁结构的FePT薄膜。通过在压电单晶衬底上施加电场，薄膜中面心立方相和面心四方相之间的相变导致了FePt/PbTiO_3/PbTiO_3异质结的磁电效应。利用电场产生的不同的矫顽力，可以在室温下通过开启或关闭电场来可逆地操纵磁化符号。基于这一实验结果，我们证明了一种信息存储技术的模型，在该模型中，数据可以被电子写入而不会被错误写入。
A series of FePt films with different magnetic structures are deposited on Pb(Mg1/3Nb2/3)O3–PbTiO3 substrates. By applying an electric field across the piezoelectric single crystal substrate, an magnetoelectric effect is observed in FePt/Pb(Mg1/3Nb2/3)O3–PbTiO3 heterostructure due to the phase transformation between face-centered cubic and face-centered tetragonal phases in the film. Taking advantage of the different coercivity caused by the electric field, the sign of magnetization can be manipulated reversibly at room temperature with the electric field switching on or off. Based on this experimental result, we demonstrate a model for the technology of information storage, in which data can be written electrically without false writing.