p-Type conductivity of hexagonal boron nitride as a dielectrically tunable monolayer: modulation doping with magnesium
p-Type conductivity of hexagonal boron nitride as a dielectrically tunable monolayer: modulation doping with magnesium
复制标题
作为介电可调单层的六方氮化硼的 p 型电导率：镁调制掺杂
DOI：
10.1039/c7nr08035b
复制
发表时间：
2018-03-07
期刊：
影响因子：
6.7
通讯作者：
Kang, Junyong
中科院分区：
文献类型：
--
作者：
Sun, Feipeng;Hao, Zhuoran;Kang, Junyong
六方氮化硼(h-BN)是一种带隙最宽的二维材料(>；6 eV)，引起了人们的广泛关注。对于探索光电子器件的潜在应用，电导调制(n或p型)是极其重要的。在这里，我们报道了利用低压化学气相沉积的方法，通过对镁的调制掺杂，获得了具有p型电导的大规模高质量h-BN单层薄膜。用缠绕铜箔辊在多叉石英叉上生长了大规模单层h-BN(>；10英寸)。氮化镁因其合适的熔点和分解温度而被单独用作掺杂前驱体。密度泛函理论计算表明，镁引入的受主能级几乎被钉扎在价带中，激活空穴高度离域到周围的h-BN晶格中。H-BN：Mg单层具有p型电导，其表面电流大于12mA，空穴密度为1.7×1014 cm(-2)。介质可调谐的h-BN单层使短波长的先进二维光电子器件的制备成为可能。
Hexagonal boron nitride (h-BN) is the widest band gap 2D material (> 6 eV), which has attracted extensive attention. For exploring potential applications in optoelectronic devices, electrical conductivity modulation (n or p type) is of extreme importance. Here, we report the achievement of a large-scale and high quality h-BN monolayer with p-type conductivity by modulation doping of Mg using a low pressure chemical vapor deposition method. A large-scale monolayer h-BN (> 10 inches) was grown by using a wound Cu foil roll on a multi-prong quartz fork. Magnesium nitride is used as a dopant precursor in a separate line due to its appropriate melting point and decomposition temperature. Density functional theory calculations revealed that the acceptor level introduced by Mg is almost pinned into the valence band and the activated holes are highly delocalized into the surrounding h-BN lattices. The h-BN: Mg monolayer showed a p-type conductivity with a considerable surface current of over 12 mu A and a hole density of 1.7 x 1014 cm(-2). The dielectrically tunable h-BN monolayer makes the fabrication of advanced 2D optoelectronic devices in short wavelength possible.