Synthesis of mesoporous ZnO, AZO, and BZO transparent conducting films using nonionic triblock copolymer as template
Synthesis of mesoporous ZnO, AZO, and BZO transparent conducting films using nonionic triblock copolymer as template
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DOI：
10.1016/j.matlet.2013.03.011
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发表时间：
2013-06
影响因子：
3
通讯作者：
N. Ueno;Bram Dwijaya;Y. Uchida;Y. Egashira;N. Nishiyama
中科院分区：
文献类型：
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作者：
N. Ueno;Bram Dwijaya;Y. Uchida;Y. Egashira;N. Nishiyama
以非离子型三嵌段共聚物（Pluronic F127：EO 106 PO 70 EO 106）为软模板剂，采用溶胶-凝胶法制备了ZnO、Al掺杂ZnO（AZO）和B掺杂ZnO（BZO）介孔薄膜。研究了ZnO、AZO和BZO薄膜的电学和光学性质。在500°C下煅烧的介孔ZnO薄膜在XRD图谱中显示出强峰，显示出12.8nm的周期距离。通过改变前驱体溶液中Zn/EO的摩尔比，薄膜的可见光透过率在50%~ 90%之间。Al或B原子的最佳掺杂量可降低薄膜的电阻率。BZO膜的最小值为0.024Ωcm，这可以在B/Zn=0.005的原子比下获得。
Mesoporous zinc oxide (ZnO), Al-doped ZnO (AZO) and B-doped ZnO (BZO) thin films were synthesized by a sol–gel method using nonionic triblock copolymer (Pluronic F127: EO106PO70EO106) as a soft template agent. Electrical and optical properties of the ZnO, AZO, and BZO films were investigated. Mesoporous ZnO films calcined at 500°C showed a strong peak in the XRD pattern, showing a periodic distance of 12.8nm. The visible light transmittance of the films ranged from 50% to more than 90% by changing the Zn/EO molar ratio in precursor solutions. The electric resistivity of the films was decreased by doping the optimum amount of Al or B atom. The minimum value of the BZO film was 0.024Ωcm which can be obtained at the atomic ratio of B/Zn=0.005.