Physical mechanisms behind the ion-cut in hydrogen implanted silicon
Physical mechanisms behind the ion-cut in hydrogen implanted silicon
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DOI：
10.1063/1.1494844
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发表时间：
2002-09-01
影响因子：
3.2
通讯作者：
Mayer, JW
中科院分区：
文献类型：
--
作者：
Höchbauer, T;Misra, A;Mayer, JW
注入氢的硅在退火时会裂开，从而促进薄硅片转移到其他衬底上，这一过程称为“离子切割”。“在我们的实验中，硅晶片被注入40 keV的质子，离子剂量从1x 10（16）到1x 10（17）cm（-2）不等，随后在600 ℃下退火。退火前后的样品进行了研究卢瑟福背散射光谱在沟道模式，弹性反冲检测分析，原子力显微镜和电子显微镜的组合。通过利用激光扫描装置测量硅样品的曲率变化来确定由质子辐照引起的材料中的机械应力。当H剂量大于或等于5 × 10（16）cm（-2）时，得到了以“爆裂”形式出现的不连续气泡。我们的解理机制的分析表明，在硅中的离子切割位置在很大程度上是由H注入过程中产生的晶格损伤控制。在较低的H剂量下，切割的位置与损伤峰值相关，并且可以通过损伤引起的面内应力和相应的弹性面外应变来解释。然而，在较高的注入剂量下，离子切割位置向更深的区域移动，该区域包含较低的损伤和足够的H浓度。这种效应可以解释为在严重损伤的硅中，在高H浓度下，与断裂力学变化相一致的弹性面外应变的快速降低。(C)2002年美国物理学会。
Hydrogen implanted silicon has been shown to cleave upon annealing, thus facilitating the transfer of thin silicon slices to other substrates, a process known as "ion-cut." In our experiments silicon wafers were implanted with 40 keV protons to a variety of ion doses ranging from 1x10(16) to 1x10(17) cm(-2) and subsequently annealed at 600 degreesC. The samples were studied before and after annealing by a combination of Rutherford backscattering spectroscopy in channeling mode, elastic recoil detection analysis, atomic force microscopy, and electron microscopy. Mechanical stresses in the material, caused by proton irradiation, were determined by measuring changes in curvature of the silicon samples utilizing a laser scanning setup. For H doses of greater than or equal to5x10(16) cm(-2) ion cutting in the form of "popping off" discrete blisters was obtained. Our analyses of the cleavage mechanisms had shown that the ion-cut location in silicon is largely controlled by the lattice damage that is generated by the H implantation process. At lower H doses, the location of the cut correlates well with the damage peak and can be explained by damage induced in-plane stress and the corresponding elastic out-of-plane strain. However, at higher implantation doses the ion-cut location shifts toward a deeper region, which contains lower damage and a sufficient concentration of H. This effect can be explained by a rapid decrease of the elastic out-of-plane strain coinciding with changing fracture mechanics at high H concentrations in heavily damaged silicon. (C) 2002 American Institute of Physics.