On Temperature Dependency of Steep Subthreshold Slope in Dual-Independent-Gate FinFET
On Temperature Dependency of Steep Subthreshold Slope in Dual-Independent-Gate FinFET
复制标题
双独立栅极 FinFET 中陡峭亚阈值斜率的温度依赖性
DOI：
10.1109/jeds.2015.2482123
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发表时间：
2015
影响因子：
2.3
通讯作者：
G. De Micheli
中科院分区：
文献类型：
--
作者：
Jian Zhang;J. Trommer;W. Weber;P. Gaillardon;G. De Micheli
双独立栅极硅FinFET在触发弱冲击电离引起的正反馈时显示出陡峭的亚阈值斜率（SS）。本文通过在100 ~ 380 K范围内对制备的器件进行表征，研究了陡晶硅的温度依赖性。与传统的mosfet相比，SS的测量特性显示对温度的敏感性降低。基于温度相关特性，我们进一步分析了陡坡ss特性，并提出了优化器件性能的可行改进措施。
Dual-independent-gate silicon FinFET has demonstrated a steep subthreshold slope (SS) when a positive feedback induced by weak impact ionization is triggered. In this paper, we study the temperature dependency of the steep SS by characterizing the fabricated device from 100 to 380 K. The measured characteristics of SS show a reduced sensitivity to temperature as compared to conventional MOSFETs. Based on the temperature-dependent characterization, we further analyze the steep-SS characteristics and propose feasible improvements for optimizing the device performance.