Comparison of 60Co Response and 10 KeV X-Ray Response in MOS Capacitors
Comparison of 60Co Response and 10 KeV X-Ray Response in MOS Capacitors
复制标题
MOS 电容器中 60Co 响应与 10 KeV X 射线响应的比较
DOI：
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发表时间：
1983
影响因子：
1.8
通讯作者：
J. McGarrity
中科院分区：
文献类型：
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作者：
T. Oldham;J. McGarrity
最近有很大的实际兴趣，在使用低能量（10 keV）的X射线，而不是通常的60钴的微电子电路的辐射测试。在这项工作中，我们研究了一些机制的MOS电容器在这两种环境中的辐射响应。具体来说，我们测量的厚度依赖的剂量增强薄SiO2膜，我们测量的场依赖的复合。我们发现显着的剂量增强为10千电子伏的X射线薄氧化物，和重组一般是更大的实际利益的领域为10千电子伏的X射线比60钴。这些结果对器件测试的影响进行了讨论。
Recently there has been great practical interest in using low energy (10 keV) x-rays rather than the usual 60Co for radiation testing of microelectronic circuits. In this work we examine some of the mechanisms underlying the radiation response of MOS capacitors in these two environments. Specifically we measure the thickness dependent dose enhancement in thin SiO2 films, and we measure the field dependence of the recombination. We found significant dose enhancement for 10 keV x-rays for thin oxides, and the recombination is generally greater at field of practical interest for 10 keV x-rays than for 60Co. The implications of these results for device testing are discussed.