Semiconductor junction circulators
Semiconductor junction circulators
复制标题
半导体结环行器
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
R. Sloan
中科院分区：
文献类型：
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作者：
L. E. Davis;R. Sloan
分析了一种半导体结环行器，并在77 K下使用理想化的无损耗GaAs，在94 GHz下预测了6%的25 dB隔离带宽。一个40 GHz的窄带、有损耗的理论设计示例表明，损耗确实会降低性能，但不会降低到使器件无用的程度。在这个窄带解决方案中，由于电子碰撞的损失建模。本例中的循环条件是使用相交阻抗曲线设计的，而不是在无损情况下实现的跟踪解决方案。这里讨论的技术可以与高T/sub c/超导体和MMIC（单片微波集成电路）兼容。<<ETX>>
A semiconductor junction circulator is analyzed, and a predicted 25 dB isolation bandwidth of 6% at 94 GHz is shown using idealized, lossless GaAs at 77 K. A narrowband, lossy, theoretical design example at 40 GHz shows that losses do reduce performance but not to such a degree as to render the device useless. In this narrowband solution the losses due to electron collisions are modeled. The circulation conditions in this example are designed using intersecting impedance curves rather than the tracking solutions achieved in the lossless case. The technology discussed here may be compatible with high-T/sub c/ superconductors and with MMICs (monolithic microwave integrated circuits).<<ETX>>