Physics-based MCT circuit model using the lumped-charge modeling approach
Physics-based MCT circuit model using the lumped-charge modeling approach
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DOI：
10.1109/63.911151
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发表时间：
2001-03
影响因子：
6.7
通讯作者：
Z. Hossain;K. Olejniczak;H. Mantooth;E. Yang;C. L. Ma
中科院分区：
文献类型：
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作者：
Z. Hossain;K. Olejniczak;H. Mantooth;E. Yang;C. L. Ma
本文提出了一种基于物理的金属氧化物半导体（MOS）控制晶闸管（MCT）模型，采用集中电荷建模技术。作为一种相对较新的功率半导体器件，迄今为止在创建用于仿真使用的精确模型方面几乎没有做出努力。迄今为止，唯一可用的MCT模型是使用两个双极晶体管的行为子电路模型。该模型适用于静态操作，但由于忽略了内部器件物理特性，在预测器件的动态行为方面存在局限性。集中电荷建模技术的使用有助于将器件的内部物理过程和结构几何形状纳入模型。因此，该技术提供了比目前可用的任何其他模型更真实和准确的一维（1-D）模型。本文介绍了混合双极MOS功率器件，如MCT的集总电荷方法的成功实施。最重要的是，该模型能够预测器件的一些动态软开关行为，这是任何基于SPICE的仿真器都无法实现的。通过Saber仿真和实验验证了该模型的正确性。
This paper presents a physics-based model of metal-oxide-semiconductor (MOS) controlled thyristor (MCT) using the lumped-charge modeling technique. As a relatively new power semiconductor device, little effort has been made thus far in creating an accurate model for simulation use. The only MCT model available to date is that using two bipolar transistors-a behavioral subcircuit model. This model works well for static operation, but has limitations in predicting the dynamic behavior of the device due to the omission of the internal device physics. The use of the lumped-charge modeling technique facilitates the inclusion of internal physical processes and the structural geometry of the device into the model. As a result, this technique provides a more realistic and accurate one-dimensional (1-D) model than any other presently available. This paper presents the successful implementation of the lumped-charge approach on hybrid bipolar-MOS power devices such as the MCT. Most importantly, this model is capable of predicting some dynamic soft-switching behavior of the device, which was never realizable by any SPICE-based simulators. The developed model is thoroughly verified through Saber simulation and experimentation.