Measurement of the hole mobility in the blend system by space charge limited current
Measurement of the hole mobility in the blend system by space charge limited current
复制标题
通过空间电荷限制电流测量共混体系中的空穴迁移率
DOI：
10.7498/aps.61.087204
复制
发表时间：
2012-04-01
影响因子：
1
通讯作者：
Yu Huang-Zhong，zhou
中科院分区：
文献类型：
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作者：
Yu Huang-Zhong，zhou
载流子迁移率测量是有机半导体材料与器件研究中的重要内容之一.制备了以聚3-己基噻吩（P3 HT）和[6，6]-苯基-61-丁酸甲酯（PCBM）为受主的不同溶剂混合物为空穴吸收材料的纯空穴器件，器件结构均为ITO/PEDOT：PSS/P3 HT：PCBM/Au。用空间电荷限制电流法测量了不同溶剂和不同退火处理的共混体系中的空穴迁移率。结果表明:器件中电荷的传输J-V曲线符合Mott-Gurney方程, 不同溶剂形成活性层中空穴具有不同的迁移率,高沸点的溶剂1, 2-二氯苯形成的活性层具有较高的空穴迁移率, 热处理有利于器件中空穴迁移率的提高.同时还进一步分析了空穴迁移率变化的原因.
The measurement of carrier mobility in organic semiconductor material and device is one of important study contents. The hole-only devices based on the different solvent blends of poly (3-hexylthiophene) (P3HT) and [6, 6]-phenyl C-61-butyric acid methyl ester (PCBM) as acceptor are fabricated, the structures of the devices are all ITO/PEDOT:PSS/P3HT:PCBM/Au. The hole mobilities in the blend systems with different solvents and various annealing treatments are measured by the space charge limited current method. The results show that the J-V curves of charge transfer in the devices meet Mott-Gurney equation, the hole mobilities in the active layer with different solvents are different, the active layer formed with high boiling point solvent 1, 2-dichlorobenzene possesses higher hole mobility, heat treatment contributes to the improvement of the hole mobility in the devices. The reason of change of hole mobility is analyzed.