High-gain low-excess-noise MWIR detection with a 3.5-μm cutoff AlInAsSb-based separate absorption, charge, and multiplication avalanche photodiode
High-gain low-excess-noise MWIR detection with a 3.5-μm cutoff AlInAsSb-based separate absorption, charge, and multiplication avalanche photodiode
复制标题
采用基于 3.5 μm 截止 AlInAsSb 的独立吸收、电荷和倍增雪崩光电二极管进行高增益、低过量噪声 MWIR 检测
作者：
Adam A. Dadey;J. McArthur;A. Kamboj;S. Bank;D. Wasserman;J. Campbell
中波长红外探测对于各种科学和军事应用是有用的。雪崩光电二极管可以提供用于检测的优势，因为它们的内部增益机制可以增加接收器的系统信噪比。我们展示了一个单独的吸收，充电和倍增雪崩光电二极管使用数字生长的窄带隙Al0.05InAsSb吸收器的MWIR检测和宽带隙Al0.7InAsSb乘法器的低过量噪声放大。在100 K的2 μm照明下，该器件的增益可以达到850以上。器件的过量噪声系数与低k系数（约0.04）成比例。器件的单位增益外量子效率在2.35 μm处达到峰值54%（1.02 A/W），在3 μm处保持在24%（0.58 A/W），在~3.5 μm处截止。在850的增益下，该器件具有0.05 mA/cm 2的增益归一化暗电流密度。该器件的增益比现有的InAs探测器高出一倍以上，且增益归一化暗电流密度比已有报道的MWIR Al 0. 15 InAsSb探测器低两个数量级。
Mid-wavelength infrared detection is useful for a variety of scientific and military applications. Avalanche photodiodes can provide an advantage for detection as their internal gain mechanism can increase the system signal-to-noise ratio of a receiver. We demonstrate a separate absorption, charge, and multiplication avalanche photodiode using a digitally-grown narrow-bandgap Al0.05InAsSb absorber for MWIR detection and a wide bandgap Al0.7InAsSb multiplier for low-excess-noise amplification. Under 2-μm illumination at 100 K the device can reach gains over 850. The excess noise factor of the device scales with a low k-factor of ~0.04. The unity-gain external quantum efficiency of the device peaks at 54% (1.02 A/W) at 2.35 μm and maintains an efficiency of 24% (0.58 A/W) at 3 μm before cutting off at ~3.5 μm. At a gain of 850 the device has a gain-normalized dark current density of 0.05 mA/cm2. This device achieves gains more than double state-of-the-art InAs detectors and gain-normalized dark current densities over two orders of magnitude lower than a previously reported MWIR Al0.15InAsSb-based detector.