Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds
Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds
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DOI：
10.1088/0957-4484/22/26/265301
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发表时间：
2011-07
期刊：
影响因子：
3.5
通讯作者：
Y. Nakamura;T. Miwa;M. Ichikawa
中科院分区：
文献类型：
--
作者：
Y. Nakamura;T. Miwa;M. Ichikawa
在Si衬底上外延生长的GaSb膜是可用作Si光子学中的光源和下一代场效应晶体管中的沟道材料的直接跃迁半导体，因为其能带隙接近光纤通信波长并且其具有高载流子迁移率。在这里，我们报告了一种新的方法异质外延生长的高品质的GaSb/Si薄膜，尽管有一个大的晶格失配为12%，使用弹性应变弛豫的GaSb纳米点的晶体密度为晶种的薄膜生长。纳米点晶种通过在Si衬底上的SiO2薄膜中的外延生长，通过与Si衬底的限制接触而外延生长。用该方法制备的GaSb/Si薄膜的发光二极管在室温下工作。该生长方法也用于制备高质量的AlGaSb薄膜。该方法为在大晶格失配系统中异质外延生长高质量薄膜提供了一条新途径。
A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ∼ 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO2 film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ∼ 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method provides a new avenue for heteroepitaxial growth of high-quality film in systems with large lattice mismatch.