The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films
The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films
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DOI：
10.1063/1.4816749
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发表时间：
2013-07
影响因子：
4
通讯作者：
B. Tian;Z. H. Chen;A. Jiang;Xuewei Zhao;L. Boting;Jianlu Wang;L. Han;Sh. Sun;J. L. Sun
中科院分区：
文献类型：
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作者：
B. Tian;Z. H. Chen;A. Jiang;Xuewei Zhao;L. Boting;Jianlu Wang;L. Han;Sh. Sun;J. L. Sun
用脉冲瞬变电流法研究了聚偏氟乙烯-三氟乙烯薄膜的极化开关行为。研究了磁畴转换电流与矫直电场的关系。由于薄膜中的极化转换较慢，测量电路中的磁区转换而不是串联电阻限制了矫顽场附近的充电电流。用蠕变模型解释了磁化转变过程，其中二维磁化壁沿横向的运动主导了极化转变过程。
The polarization switching behavior in poly(vinylidene fluoride-trifluoroethylene) thin films is studied by using a pulse transient current method. The dependence of the domain switching current on the coercive electric field was investigated. The charging current around the coercive field was found to be limited by domain switching instead of the series resistor in the measurement circuit because of the slow polarization switching in the films. The domain-switching process was explained by a creep model wherein the two-dimension domain walls motion in the transverse direction dominates the polarization switching process.