The angular dependence of the planar Hall effect in Co-Ni films
The angular dependence of the planar Hall effect in Co-Ni films
复制标题
Co-Ni 薄膜中平面霍尔效应的角度依赖性
DOI：
10.1063/1.368145
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发表时间：
1998
影响因子：
3.2
通讯作者：
J. C. Lee
中科院分区：
文献类型：
--
作者：
S. Jen;K. P. Huang;J. C. Lee
用气相沉积法制备了Co100−xNix(x=70，75，80，90at. %Ni)合金薄膜。易轴可以由平行于样品长度(L膜)或宽度(T膜)的沉积场来定义。用慢扫描场H同时测量了各向异性磁阻和平面霍尔效应磁滞回线，硬轴与H之间的夹角θ可以改变。在磁化或退磁过程的每个阶段也记录了磁化图案。除了常见的AMR和Phe行为外，我们还观察到了在切换场Hsw的正常曲线上叠加的电压“山”的形式，如ΔVmr和ΔVPh。ΔVmr是θ的偶数函数，而ΔVph是奇数函数。对基于单磁区模型的著名磁输运理论进行了修正，使之更适合于多磁区结构的实际情况。我们已经成功地解释了实验上观察到的所有ΔVPh数据。此外，从角度依赖关系..。
Co100−xNix (x=70, 75, 80, 90 at. % Ni) alloy films were made by the vapor deposition method. An easy axis could be defined by a deposition field parallel to either the length (L film) or width (T film) of the sample. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) hysteresis loops were simultaneously measured with a slowly sweeping field H. The angle θ between the hard axis and H could be varied. Domain patterns were also recorded at each stage of the magnetization or demagnetization process. Besides the usual AMR and PHE behaviors, we have observed the forms of a voltage “mountain,” like ΔVmr and ΔVph, superimposed on the normal curves at the switching field Hsw. ΔVmr is an even function of θ and ΔVph is an odd function. The well known magneto-transport theory based on the single-domain model is modified to adopt the real situation of the multidomain structure. We have been successful in explaining all the ΔVph data observed experimentally. In addition, from the angular dependenc...