Dendrimer Monolayers as Negative and Positive Tone Resists for Scanning Probe Lithography
Dendrimer Monolayers as Negative and Positive Tone Resists for Scanning Probe Lithography
复制标题
树枝状聚合物单层作为扫描探针光刻的负色调和正色调光刻胶
DOI：
10.1021/nl049700i
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发表时间：
2004
期刊：
影响因子：
10.8
通讯作者：
J. Fréchet
中科院分区：
文献类型：
--
作者：
M. Rolandi;I. Suez;H. Dai;J. Fréchet
提出了一种基于树枝状分子自组装单层膜的扫描探针光刻新方案。该方法依赖于官能化树枝状聚合物分子的多功能性，通过在Ti膜上形成密集堆积的自组装保护单层来有效地起到抗蚀剂的作用。Ti表面的图案化是使用原子力显微镜针尖作为超锋利的划线或作为电场点源来修饰单层来完成的。这与仔细选择的蚀刻条件相结合，允许使用树枝状聚合物单层作为负性和正性抗蚀剂。容易形成的TiO 2功能ca. 25纳米宽和12纳米高的氧化硅和约。在薄Ti膜中可以容易地实现50 nm宽的间隙。可以进一步开发树枝状聚合物抗蚀剂方法，以将最小特征尺寸提高到单个树枝状聚合物分子水平。
A new scanning probe lithography scheme based on a self-assembled dendrimer monolayer on thin Ti films is presented. The method relies on the versatility of the functionalized dendrimer molecules to effectively function as etch resists by forming a densely packed self-assembled protective monolayer on a Ti film. Patterning of the Ti surface is accomplished using an AFM tip either as an ultra sharp scribe or as an electrical field point source to modify the monolayer. This, coupled to carefully selected etching conditions, allows the use of the dendrimer monolayers as both negative and positive tone resists. Facile formation of TiO2 features ca. 25 nm wide and 12 nm tall on silicon oxide and ca. 50 nm wide gaps in a thin Ti film can easily be achieved. The dendrimer resist approach can be further developed in order to improve the minimum feature size to the single dendrimer molecule level.