Transmission electron microscope study of a threading dislocation with b=[0001]+<1-100> and its effect on leakage in a 4H-SiC MOSFET
Transmission electron microscope study of a threading dislocation with b=[0001]+<1-100> and its effect on leakage in a 4H-SiC MOSFET
复制标题
b=[0001] <1-100> 的穿透位错的透射电子显微镜研究及其对 4H-SiC MOSFET 泄漏的影响
DOI：
10.1080/09500839.2013.798047
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发表时间：
2013
影响因子：
1.2
通讯作者：
Hiroyasu
中科院分区：
文献类型：
--
作者：
Onda;Shoichi; Watanabe;Hiroki; Kito;Yasuo; Kondo;Hiroyuki; Uehigashi;Hideyuki; Hosokawa;Norikazu; Hisada;Yoshiyuki; Shiraishi;Kenji; Saka;Hiroyasu
用透射电子显微镜研究了4H-SiCMOSFET中的穿线位错(TD‘s)，着重分析了它们对p-n结漏电流的影响。共发现了两种位错类型：一种为螺纹型位错(TnSD)，另一种为螺纹型混合位错(TMD)，后者在本研究中为首次发现。TnSD只显示了可以忽略的小泄漏，而TMD显示了很大的泄漏。对渗漏程度不同的原因进行了讨论。
Threading dislocations (TD’s) in a 4H-SiC MOSFET were characterized using transmission electron microscopy with special emphasis of their effects on leakage in a p–n junction. Two types of TD’s were identified; a threading near-screw dislocation (TnSD) with , and a threading mixed dislocation (TMD) with , the last of which has been found for the first time in this study. The TnSD show only negligibly small leakage, while TMD shows a large leakage. Origins of the difference in the degree of the leakage have been discussed.