High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region
High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region
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使用锥形有源区域具有宽带驱动电流不敏感发射光谱的高功率量子点超发光 LED
DOI：
10.1109/lpt.2008.921108
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发表时间：
2008-05-01
影响因子：
2.6
通讯作者：
Wang, Z. G.
中科院分区：
文献类型：
--
作者：
Zhang, Z. Y.;Hogg, R. A.;Wang, Z. G.
利用高密度、大不均匀展宽、锥角泵浦区和蚀刻V槽结构的自组装QD的组合，实现了高功率、宽带量子点（QD）超辐射发光二极管。该大面积器件具有大于 70 nm 的 3 dB 带宽和驱动电流不敏感的发射光谱，在连续波操作下具有 100 mW 的输出功率。对于脉冲操作，可以获得大于 200mW 的输出功率。
High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.