One gigarad passivating nitrided oxides for 100% internal quantum efficiency silicon photodiodes
One gigarad passivating nitrided oxides for 100% internal quantum efficiency silicon photodiodes
复制标题
1%20gigarad%20钝化%20氮化%20氧化物%20for%20100%%20内部%20量子%20效率%20硅%20光电二极管
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
L. Canfield
中科院分区：
文献类型：
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作者：
R. Korde;J. Cable;L. Canfield
100%内量子效率的硅光电二极管与4- 8-nm的钝化二氧化硅已被制造的快速热氮化在一氧化二氮和氨的气氛中，以增加其辐射硬度的目的。制造的二极管暴露于10.2 eV的光子使用氢等离子体光源和正入射单色器。所测量的量子效率退化表明，界面陷阱面积密度随剂量呈亚线性增加，直到测量的剂量为1格拉德。在暴露于100%相对湿度后，在50至250 nm范围内没有观察到量子效率的明显变化。这表明氮化的Si-SiO/sub 2/界面实际上对水分不敏感。>
100% internal quantum efficiency silicon photodiodes with 4- to 8-nm passivating silicon dioxide have been fabricated by rapid thermal nitridation in nitrous oxide and ammonia ambients with the aim of increasing their radiation hardness. The fabricated diodes were exposed to 10.2-eV photons using a hydrogen plasma light source and a normal incidence monochromator. The measured quantum efficiency degradation indicates that the interface trap area density increases sublinearly with dose up to a measured dose of 1 Grad. No noticeable change in quantum efficiency over the range of 50 to 250 nm was observed after exposure to 100% relative humidity. This suggests that the nitrided Si-SiO/sub 2/ interface is practically insensitive to moisture. >