Fabrication of nanogap electrodes by field-emission-induced- electromigration
Fabrication of nanogap electrodes by field-emission-induced- electromigration
复制标题
场发射诱导电迁移制备纳米间隙电极
DOI：
10.1116/1.3039683
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发表时间：
2009
影响因子：
1.4
通讯作者：
J. Shirakashi
中科院分区：
文献类型：
--
作者：
Y. Tomoda;Keisuke Takahashi;M. Hanada;W. Kume;J. Shirakashi
作者报告了一种简单易行的技术，用于制造距离小于10nm的纳米间隙。该技术是基于场发射电流引起的电迁移。在这里，作者研究了隧道电阻与纳米间隙电极的形状和初始间隙分离的关系。采用电子束光刻和提离工艺制备了非对称形状的初始纳米间隙电极，电极间距为30 ~ 60nm。在非对称形状的纳米隙中，电场发射诱导电迁移时的隧道电阻由预设电流的大小控制，从1nAto150μA开始，随着预设电流的增大，隧道电阻从100TΩto100kΩ数量级减小。这种趋势与具有对称形状的纳米间隙非常相似。此外，电迁移后的隧道电阻与初始间隙分离的关系较小，完全由预设电流决定。这表明……是可能的。
The authors report a simple and easy technique for the fabrication of nanogaps with separations of less than 10nm. This technique is based on electromigration induced by field emission current. Here, the authors investigated the dependence of tunnel resistance on the shape of nanogap electrodes and initial gap separation. The initial nanogap electrodes having asymmetrical shape with the separation of 30–60nm were fabricated by electron-beam lithography and lift-off process. In the nanogaps with asymmetrical shape, the tunnel resistance was controlled by the magnitude of the preset current during field-emission-induced electromigration and decreased from the order of 100TΩto100kΩ with increasing the preset current from 1nAto150μA. This tendency was quite similar to that of nanogaps with symmetrical shape. Furthermore, the tunnel resistance after the electromigration was less dependent on the initial gap separation and was completely determined by the preset current. This suggests that it is possible to con...
通过场发射诱导电迁移控制纳米间隙的隧道电阻
DOI：
--
发表时间：
2007
期刊：
Jpn. J. Appl. Phys. 46
影响因子：
--
作者：
S. Kayashima;K. Takahashi;M. Motoyama and J. Shirakashi
通讯作者：
M. Motoyama and J. Shirakashi