Observation of charge density wave transition in TaSe3 mesowires
Observation of charge density wave transition in TaSe3 mesowires
复制标题
TaSe3 介观线中电荷密度波跃迁的观察
DOI：
10.1063/1.5099110
复制
发表时间：
2019
影响因子：
4
通讯作者：
Zhang C J
中科院分区：
文献类型：
--
作者：
Yang J;Wang Y Q;Zhang R R;Ma L;Liu W;Qu Z;Zhang L;Zhang S L;Tong W;Pi L;Zhu W K;Zhang C J
准一维（准1D）TaSe 3因其有趣的超导电性以及与非平凡拓扑结构和电荷密度波（CDW）状态可能的相互作用而引起了人们的广泛关注。然而，不同于同构类似物，CDW尚未观察到TaSe 3，尽管其准一维字符，这是应该促进Peierls不稳定性和CDW。在这里，我们合成TaSe3介导线（MW）使用一步的方法。对于厚度约为300 nm的分子量，在65 K时电阻率测量中出现了明显的CDW转变，这在以前的研究中是没有的，拉曼表征和磁化率测量进一步证实了这一点。为了比较，我们还制备了块状单晶TaSe 3。虽然电阻率和磁阻测量没有出现异常，但霍尔效应检测到的载流子类型在50 K以下从n型变为p型，这表明费米面的重建可能与CDW有关。MWs中CDW的增强归因于降维。TaSe3是研究准一维体系中CDW与超导电性的相互关系和竞争的一个很有前途的平台。
The quasi-one-dimensional (quasi-1D) TaSe3 attracts considerable attention for its intriguing superconductivity and possible interplay with nontrivial topology and charge density wave (CDW) state. However, unlike the isostructural analogues, CDW has not been observed for TaSe3 despite its quasi-1D character that is supposed to promote Peierls instabilities and CDW. Here we synthesize TaSe3 mesowires (MWs) using a one-step approach. For the MW of ~300 nm thick, a distinct CDW transition occurs at 65 K in the resistivity measurement, which has not been reported before and is further evidenced by the Raman characterization and susceptibility measurement. For comparison, we have also prepared bulk single crystal TaSe3. Although no anomaly appears in the resistivity and magnetoresistance measurements, the carrier type detected by Hall effect varies from n-type to p-type below 50 K, suggesting a reconstruction of Fermi surface that could be associated with CDW. The enhancement of CDW in the MWs is attributed to the reduced dimensionality. TaSe3 is demonstrated to be a promising platform to study the correlation and competition of CDW and superconductivity in the quasi-1D systems.