Persistent Room-Temperature Photodarkening in Cu-Doped β-Ga_{2}O_{3}.
Persistent Room-Temperature Photodarkening in Cu-Doped β-Ga_{2}O_{3}.
复制标题
Cu 掺杂 β-Ga_{2}O_{3} 中的持续室温光暗化。
DOI：
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发表时间：
2022
影响因子：
8.6
通讯作者：
J. Varley
中科院分区：
文献类型：
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作者：
J. Jesenovec;C. Pansegrau;M. McCluskey;J. McCloy;T. Gustafson;L. Halliburton;J. Varley
β-Ga2O3}是一种在电力电子领域具有广阔应用前景的超宽带隙半导体材料。受主掺杂剂的引入产生了薄膜器件所需的半绝缘衬底。在本工作中，铜掺杂的β-Ga_2O_3}暴露在紫外光>；4 EV下，在室温下引起大规模的、持续的光致变暗。电子顺磁共振光谱表明，光照射将Cu^{2+}转化为Cu^{3+}，这是一种罕见的氧化状态，是导致光吸收的原因。光变暗伴随着红外光谱中O-─-H振动模的出现。杂化函数计算表明，铜受主能以间隙缺陷(H{I})或代位缺陷(H{O})形式与氢施主配位。当Cu_(Ga)-H_(O)络合物吸收光时，氢被释放出来，导致观察到的Cu^{3+}物种和O─H模式。
β-Ga_{2}O_{3} is an ultrawide band gap semiconductor with emerging applications in power electronics. The introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of Cu-doped β-Ga_{2}O_{3} to UV light >4 eV is shown to cause large, persistent photo-induced darkening at room temperature. Electron paramagnetic resonance spectroscopy indicates that light exposure converts Cu^{2+} to Cu^{3+}, a rare oxidation state that is responsible for the optical absorption. The photodarkening is accompanied by the appearance of O─H vibrational modes in the infrared spectrum. Hybrid function calculations show that Cu acceptors can favorably complex with hydrogen donors incorporated as interstitial (H_{i}) or substitutional (H_{O}) defects. When Cu_{Ga}-H_{O} complexes absorb light, hydrogen is released, contributing to the observed Cu^{3+} species and O─H modes.