Highly oriented poly(di-n-alkylsilylene) films on oriented PTFE substrates
Highly oriented poly(di-n-alkylsilylene) films on oriented PTFE substrates
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取向 PTFE 基材上的高度取向聚（二正烷基硅烯）薄膜
DOI：
10.1002/adma.19930051208
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发表时间：
1993
影响因子：
29.4
通讯作者：
Bernard Lot
中科院分区：
文献类型：
--
作者：
H. Frey;S. Sheiko;M. Möller;J. Wittmann;Bernard Lot
高度取向的聚硅烯层在电子照相、非线性光学、显示器制造和微光刻中具有潜在的应用。报道了在高度取向的PTFE基底上通过结晶制备这种层，并描述了通过光学双折射、电子衍射和二向色性红外实验对其进行评估。为什么这种取向技术的工作还不清楚，特别是因为它可以应用于聚（二正烷基甲硅烷基）与不同的晶体结构。几种可能的潜在机制进行了讨论。
Highly oriented polysilylene layers have potential applications in electrophotography, nonlinear optics, display fabrication, and microlithography. The preparation of such layers by crystallization on a highly oriented PTFE substrate is reported, and their assessment by optical birefringence, electron diffraction and dichroic infrared experiments described. Why this orientation technique works is not yet clear, especially as it can be applied to poly(di-n-alkylsilylen)s with different crystal structures. Several possible underlying mechanisms are discussed.