Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
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DOI：
10.1063/1.2805028
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发表时间：
2007-11-19
影响因子：
4
通讯作者：
Hu, Evelyn L.
中科院分区：
文献类型：
--
作者：
Sharma, Rajat;Choi, Yong-Seok;Hu, Evelyn L.
我们报道了一种采用高折射率对比度空气隙分布布拉格反射器（DBR）的高效InGaN微腔发光二极管的实现。详细的分析推导出一个有效的腔长近似500 nm和腔模阶数为5和6的测量法布里-珀罗条纹。一个值的反射率类似于70%，确定为4.5周期的空气/Al 0.08Ga 0.92N DBR通过分析腔精细度的角度分辨光致发光（PL）数据的基础上。光提取效率提高了五倍，验证了电探测以及角度分辨PL测量。(C)2007年，美国物理学会。
We report on the realization of highly efficient InGaN microcavity light-emitting diodes incorporating a high index contrast air-gap distributed Bragg reflector (DBR). Detailed analysis deduces an effective cavity length of similar to 500 nm and cavity mode orders of 5 and 6 for measured Fabry-Perot fringes. A value reflectivity of similar to 70% was determined for the 4.5 period air/Al0.08Ga0.92N DBR through the analysis of cavity finesse based on the angle-resolved photoluminescence (PL) data. A fivefold improvement in light extraction efficiency was verified by electrical probing as well as angle-resolved PL measurements. (C) 2007 American Institute of Physics.