Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization
Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization
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DOI：
10.1063/1.4974473
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发表时间：
2017-01
影响因子：
4
通讯作者：
H. Oka;T. Amamoto;M. Koyama;Y. Imai;S. Kimura;T. Hosoi;T. Shimura;Heiji Watanabe
中科院分区：
文献类型：
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作者：
H. Oka;T. Amamoto;M. Koyama;Y. Imai;S. Kimura;T. Hosoi;T. Shimura;Heiji Watanabe
我们开发了一种基于液相晶化的在透明衬底上形成单晶锗锡（GeSn）合金的方法。通过控制和设计熔化生长过程中的成核，在石英衬底上生长高度拉伸应变的单晶GeSn层，而不使用任何晶种或催化剂。在Sn含量为2.6%的石英衬底上获得了423 cm 2/V s的顶栅单晶GeSn MOSFET的峰值场效应空穴迁移率，表明由于Sn掺入和拉伸应变，具有优异的晶体质量和迁移率增强。
We developed a method of forming single-crystalline germanium-tin (GeSn) alloy on transparent substrates that is based on liquid-phase crystallization. By controlling and designing nucleation during the melting growth process, a highly tensile-strained single-crystalline GeSn layer was grown on a quartz substrate without using any crystal-seeds or catalysts. The peak field-effect hole mobility of 423 cm2/V s was obtained for a top-gate single-crystalline GeSn MOSFET on a quartz substrate with a Sn content of 2.6%, indicating excellent crystal quality and mobility enhancement due to Sn incorporation and tensile strain.