Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates

Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates
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硅衬底上异质外延窄带隙半导体中截止波长为 3-12 μm 的红外传感器阵列

DOI:
10.1109/16.78386
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发表时间:
1991
期刊:
影响因子:
--
通讯作者:
A. Tiwari
A. Tiwari
中科院分区:
--
文献类型:
--
作者:
H. Zogg;S. Blunier;T. Hoshino;C. Maissen;J. Mašek;A. Tiwari

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作者描述了在Si衬底上异质外延IV-VI族铅硫族化物窄禁带半导体(NGS)以及II-VI族材料(CdTe)。通过使用堆叠的中间CaF/sub 2/-BaF/sub 2/双层来实现外延,以克服大的晶格和热膨胀失配。作者使用铅硫族化物(PbS、PbTe、Pb/sub 1-x/Eu/sub x/Se和Pb/sub 1-x/Sn/sub x/Se)而不是Hg/sub 1-x/Cd/sub x/Te(MCT)作为IR敏感NGS材料,因为生长和制造技术要容易得多,并且铅盐的成分均匀性不那么重要,而最大灵敏度与MCT相当。铅盐的高介电常数产生更多的容错设备,由于有效屏蔽的电荷产生的缺陷。作者在硅基片上制作了截止波长为3 ~ 12 μ m的线性传感器阵列。最好的PbTe对Si传感器(截止5.5 μ m)的灵敏度已经与具有相同截止波长的MCT的灵敏度相当,而第一个Pb/sub 1-x/Sn/sub x/Se器件的灵敏度是下面的2-5倍。虽然许多制造步骤相当粗糙,远未优化,但这种相当大的改进是很容易实现的。>
The authors describe heteroepitaxy of IV-VI lead chalcogenide narrow-gap semiconductor (NGS) as well as II-VI materials (CdTe) on Si substrates. Epitaxy is achieved by using stacked intermediate CaF/sub 2/-BaF/sub 2/ bilayers to overcome the large lattice and thermal expansion mismatch. The authors use lead chalcogenides (PbS, PbTe, Pb/sub 1-x/Eu/sub x/Se, and Pb/sub 1-x/Sn/sub x/Se) rather than Hg/sub 1-x/Cd/sub x/Te (MCT) as IR-sensitive NGS material because growth and fabrication techniques are much easier and compositional homogeneity much less critical with lead salts, while maximum sensitivities are comparable to those of MCT. The high permittivity of lead salts yields much more fault-tolerant devices due to the effective shielding of charges resulting from defects. The authors have fabricated linear sensor arrays on Si substrates with cutoff wavelengths ranging from 3 to above 12 mu m. The sensitivities of the best PbTe on Si sensors (cutoff 5.5 mu m) are already comparable to those of MCT with the same cutoff wavelengths, while those of the first Pb/sub 1-x/Sn/sub x/Se devices are a factor of 2-5 below. Although many fabrication steps are rather crude and far from being optimized, this considerable improvement is easily possible. >