Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations
Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations
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DOI：
10.1016/j.sse.2023.108589
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发表时间：
2023-01
影响因子：
1.7
通讯作者：
Taiki Nishida;T. Oishi;Tomohiro Otsuka;Y. Yamaguchi;M. Tsuru;K. Yamanaka;Saga University;Mitsubishi Electric Corporation
中科院分区：
文献类型：
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作者：
Taiki Nishida;T. Oishi;Tomohiro Otsuka;Y. Yamaguchi;M. Tsuru;K. Yamanaka;Saga University;Mitsubishi Electric Corporation
