Room temperature deposition of functional ceramic films on low-cost metal substrate
Room temperature deposition of functional ceramic films on low-cost metal substrate
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DOI：
10.1016/j.ceramint.2018.06.027
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发表时间：
2018-10-01
影响因子：
5.2
通讯作者：
Webber, Kyle G.
中科院分区：
文献类型：
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作者：
Khansur, Neamul H.;Eckstein, Udo;Webber, Kyle G.
在各种实际应用中，例如高功率致动器、高灵敏度传感器和能量收集装置，需要厚度为1-100 μ m且尺寸范围从几μ m（2）到几cm（2）的多晶压电膜。采用传统的薄膜沉积工艺，例如溶胶-凝胶、溅射、化学气相沉积或脉冲激光沉积，由于其低沉积速率和高界面应力，难以制备具有更高厚度的薄膜。气溶胶沉积法（AD）是一种相对较新的沉积技术，可用于在室温下通过在各种陶瓷、金属、玻璃和聚合物基底上固结亚微米尺寸的陶瓷颗粒来制备高度致密的厚膜。采用AD法在低成本的金属衬底上制备了不同厚度的BaTiO_3铁电陶瓷薄膜，薄膜厚度为1 ~ 30 μ m。分析了薄膜的表面形貌和附着力。内部残余应力的分析表明，在处理后的膜的等双轴压应力状态。在500摄氏度退火的薄膜的电特性显示出类似于14 μ C/cm（2）的增强的极化值超过处理后的薄膜。这种性能的提高与降低内部残余应力有关。此外，在这项工作中制备的BT薄膜被发现可以承受大于100 kV/mm的电场，这可能与AD薄膜固有的相对无缺陷的结构有关。
In various practical applications, such as high power actuators, high sensitivity sensors, and energy harvesting devices, polycrystalline piezoelectric films of 1-100 mu m thickness and sizes ranging from several mu m(2) to several cm(2) are required. With conventional film deposition processes, such as sol-gel, sputtering, chemical vapor deposition, or pulsed laser deposition, it is difficult to fabricate films with higher thickness due to their low deposition rate and high interfacial stress. The aerosol deposition method (AD), a relatively new deposition technique, can be used to fabricate highly dense thick films at room temperature by the consolidation of sub micrometer-sized ceramic particles on various ceramic, metal, glass, and polymer substrates. Ferroelectric BaTiO3 ceramic films of different thicknesses ranging from 1 to 30 gm were fabricated on a low-cost metallic substrate at room temperature using the AD method. Surface morphology and adhesion of the film were analyzed. Analysis of internal residual stresses revealed an equibiaxial compressive stress state in the as-processed film. Electrical characterization of films annealed at 500 degrees C shows an enhanced polarization value of similar to 14 mu C/cm(2) over that of the as-processed film. This improved property is related to the decreasing internal residual stress. In addition, the BT films prepared in this work were found to withstand electric fields greater than 100 kV/mm, which is possibly related to the inherent relatively defect-free structure of AD films.