Performance and Irradiation Tests of the 0.3$\mu$m CMOS TDC for the ATLAS MDT
Performance and Irradiation Tests of the 0.3$\mu$m CMOS TDC for the ATLAS MDT
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ATLAS MDT 0.3$mu$m CMOS TDC 的性能和辐照测试
DOI：
10.5170/cern-1999-009.462
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
M. Fukuda
中科院分区：
文献类型：
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作者：
Y. Arai;T. Emura;M. Fukuda
ATLAS Muon TDC测试元件组芯片（AMTTEG）的开发和测试旨在确认TDC关键电路的性能并测量工艺的辐射耐受性。该芯片采用 0.3 μm CMOS 门阵列技术制造。对芯片关键元件（例如 PLL 和数据缓冲电路）的测量表明了足够的性能。还检查了使用钴源的伽马射线照射和使用法国 PROSPERO 反应堆的中子照射的效果。测试结果表明，辐射耐受性足以满足 ATLAS MDT 环境中电路的运行。
ATLAS Muon TDC test-element group chip (AMTTEG) was developed and tested to confirm the performance of critical circuits of the TDC and measure radiation tolerance of the process. The chip was fabricated in a 0.3 μm CMOS Gate-Array technology. Measurements of critical elements of the chip such as the PLL, and data buffering circuits demonstrated adequate performance. The effect of gamma-ray irradiation, using a Co source, and neutron irradiation, using PROSPERO reactor in France, were also examined. The test results revealed radiation tolerance adequate for the operation of the circuits in the environment of the ATLAS MDT.