Thermoelectric properties of half-Heusler bismuthides ZrCo1-xNixBi (x=0.0 to 0.1)
Thermoelectric properties of half-Heusler bismuthides ZrCo1-xNixBi (x=0.0 to 0.1)
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DOI：
10.1007/s11664-007-0153-1
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发表时间：
2007-07-01
影响因子：
2.1
通讯作者：
Poon, S. Joseph
中科院分区：
文献类型：
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作者：
Ponnambalam, V.;Zhang, Bo;Poon, S. Joseph
半赫斯勒（HH）合金作为热电体的有用性主要受到其相对较大的热导率的限制，这是一个关键问题，尽管它们具有高的热电功率因数。在这方面，含Bi的半Heusler合金是特别有吸引力的，因为它们潜在地具有低热导率。一种这样的材料是ZrCoBi。我们通过固相反应制备了纯的和Ni掺杂的ZrCoBi。为了评估热电势，我们测量了高达1000 K的电阻率（p = 1/sigma）和热电势（sigma）以及高达300 K的热导率（k）。我们的测量结果表明，这些合金的电阻率约为几米Ω厘米和热功率大于一百亩V K-1是可能的。低k值也是可能的。基于这些数据，我们得出结论，该系统有潜力进一步优化，尽管我们目前测得的低功率因数（alpha（2）sigma T）。
The usefulness of half-Heusler (HH) alloys as thermoelectrics has been mainly limited by their relatively large thermal conductivity, which is a key issue despite their high thermoelectric power factors. In this regard, Bi-containing half-Heusler alloys are particularly appealing, because they are, potentially, of low thermal conductivity. One such a material is ZrCoBi. We prepared pure and Ni-doped ZrCoBi by a solid-state reaction. To evaluate thermoelectric potential we measured electrical resistivity (p = 1/sigma) and thermopower (sigma) up to 1000 K and thermal conductivity (k) Up to 300 K. Our measurements indicate that for these alloys resistivity of approximately a few m Omega cm and thermopower larger than a hundred mu V K-1 are possible. Low k values are also possible. On the basis of these data we conclude that this system has a potential to be optimized further, despite the low power factors (alpha(2) sigma T) we have currently measured.