Characteristics of a photonic bandgap single defect microcavity electroluminescent device
Characteristics of a photonic bandgap single defect microcavity electroluminescent device
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DOI：
10.1109/3.945320
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发表时间：
2001-09
影响因子：
2.5
通讯作者：
Wei Dong Zhou;J. Sabarinathan;Pallab Bhattacharya;B. Kochman;E. Berg;Pei-Chen Yu;Stella W. Pang
中科院分区：
文献类型：
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作者：
Wei Dong Zhou;J. Sabarinathan;Pallab Bhattacharya;B. Kochman;E. Berg;Pei-Chen Yu;Stella W. Pang
本文描述了一种在室温下工作的脉冲电流注入微腔面发射相干电致发光器件。该微腔由GaAs基异质结构的二维光子晶体中心的单个缺陷形成。增益区由两个70-/spl Aring/压应变In/sub 0.15/Ga/sub 0.85/As量子威尔斯组成，其在940 nm处表现出自发发射峰。单个器件的最大测量输出功率为14.4 /spl mu/W。输出的近场图像类似于计算的TE模式分布在一个单一的缺陷微腔。测量的远场图案指示微腔光源的预测方向性。该器件的光电流特性表现出典型的单模或少模微腔器件的逐渐开启或软阈值。利用载流子和光子速率方程对特性进行分析，得到自发发射因子/spl β//spl ap/0.06。
A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70-/spl Aring/ compressively strained In/sub 0.15/Ga/sub 0.85/As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 /spl mu/W. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor /spl beta//spl ap/0.06.