PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE
PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE
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DOI：
10.1103/physrev.137.a245
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发表时间：
1965-01-01
期刊：
影响因子：
--
通讯作者：
ALLEN, FG
中科院分区：
文献类型：
--
作者：
GOBELI, GW;ALLEN, FG
给出了已知掺杂的GaAs、GaSb、InAs和InSb在10 - 10 Torr真空中解理的近乎完美的原子级清洁（110）表面的功函数和光电阈值、产率和能量分布，并与解理（111）Si和Ge的结果进行了比较。谱-产率曲线由一个或多个不同的线性部分组成。这些都被解释为一个直接的光学激发在散装的k是保守的发射过程中，和过渡暂时确定。GaAs和InAs，像Si，表现出可观的差距（0.76 eV的GaAs）之间的费米能级和价带的顶部在表面上，并显示只有一个线性上升的产量高达6.3 eV。GaSb和InSb，像Ge一样，具有与表面处的价带顶部一致的费米能级，并且表现出两种不同的产率线性上升。表面状态，而目前在足够的密度，导致能带弯曲，不产生明显的发射相比，价带状态。
Work function and photoelectric threshold, yield, and energy distributions are given for nearly perfect atomically clean (110) surfaces of GaAs, GaSb, InAs, and InSb of known doping cleaved in a vacuum of 10− 10 Torr, and are compared with results on cleaved (111) Si and Ge. The spectral-yield curves are made up of one or more distinct linear portions. Each of these is interpreted as a direct optical excitation in the bulk for which k is conserved during emission, and the transitions are tentatively identified. GaAs and InAs, like Si, exhibit appreciable gaps (0.76 eV for GaAs) between the Fermi level and the top of the valence band at the surfaces and show only one linear rise in yield up to 6.3 eV. GaSb and InSb, like Ge, have the Fermi level coincident with the top of the valence band at the surface, and exhibit two different linear rises in yield. Surface states, while present in sufficient density to cause band bending, do not yield appreciable emission compared to valence-band states.