High hole mobility GeSn on insulator formed by self-organized seeding lateral growth
High hole mobility GeSn on insulator formed by self-organized seeding lateral growth
复制标题
通过自组织晶种横向生长在绝缘体上形成高空穴迁移率GeSn
DOI：
10.1088/0022-3727/48/44/445103
复制
发表时间：
2015-11-11
影响因子：
3.4
通讯作者：
Wang, Qiming
中科院分区：
文献类型：
--
作者：
Liu, Zhi;Wen, Juanjuan;Wang, Qiming
采用自组织籽晶横向生长方法，获得了张应变绝缘体上锗锡单晶（GSOI）。在GeSn条带的横向生长过程中，Sn原子发生偏聚，Sn的分布也发生了变化。在GSOI的两个边缘，Sn浓度分布被发现与基于Scheil方程的计算吻合得很好。采用GSOI材料制作了P沟道金属氧化物半导体场效应晶体管。获得了良好的晶体管性能，低场峰值空穴迁移率为383 cm 2 V-1 s-1，这表明该GSOI结构的高质量。
Tensile strained single-crystal GeSn on insulator (GSOI) was obtained using self-organized seeding lateral growth. Segregation of Sn atoms and Sn distribution occurred during the lateral growth of the GeSn stripe. At both edges of the GSOI, Sn concentration distribution was found in good agreement with calculation based on the Scheil equation. P-channel metal–oxide–semiconductor field effect transistors were fabricated using the GSOI materials. Good transistor performance with the low field peak hole mobility of 383 cm2 V−1 s−1 was obtained, which indicated the high quality of this GSOI structure.