A Low On-State Voltage and Saturation Current TIGBT With Self-Biased pMOS
A Low On-State Voltage and Saturation Current TIGBT With Self-Biased pMOS
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DOI：
10.1109/led.2016.2614514
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发表时间：
2016-09
影响因子：
4.9
通讯作者：
Ping Li;Xinjiang Lyu;Junji Cheng;Xingbi Chen
中科院分区：
文献类型：
--
作者：
Ping Li;Xinjiang Lyu;Junji Cheng;Xingbi Chen
提出了一种新型的沟槽绝缘双极晶体管（TIGBT），在沟槽栅下引入p层，形成自偏置pMOS，为空穴电流提供额外的路径。在导通状态下，沟槽nMOS的漏源电压被箝位，这有助于降低饱和电流。在阻断状态下，反向电压由p-层/n-漂移的结来维持，使得被p-基极区和n-漂移区夹在中间的n-层可以尽可能重掺杂，以在不影响击穿能力的情况下降低通态电压。仿真结果表明，与传统TIGBT相比，在相同击穿电压下，TIGBT的饱和电流和通态电压分别降低了47%和35%。
A novel trench insulated bipolar transistor (TIGBT) is proposed, where a p-layer beneath the trench gate is introduced to form a self-biased pMOS and provide an additional path for the hole current. In the on-state, the drain-to-source voltage of the trench nMOS is clamped, which helps to decrease the saturation current. In the blocking state, the reverse voltage is sustained by the junction of p-layer/n-drift, so that the n-layer sandwiched by the p-base region and the n-drift region can be as heavily doped as possible to reduce the on-state voltage without affecting the breakdown capability. The simulation results show that, in comparison with the conventional one, under the same breakdown voltage, the saturation current and the on-state voltage of the proposed TIGBT are decreased by 47% and 35%, respectively.