Nano edge roughness in polymer resist patterns
Nano edge roughness in polymer resist patterns
复制标题
聚合物光刻胶图案中的纳米边缘粗糙度
DOI：
10.1063/1.109901
复制
发表时间：
1993
影响因子：
4
通讯作者：
S. Okazaki
中科院分区：
文献类型：
--
作者：
T. Yoshimura;H. Shiraishi;J. Yamamoto;S. Okazaki
通过原子力显微镜测量，研究了由负型电子束聚合物抗蚀剂制成的纳米结构中描绘图案中的超小边缘粗糙度（纳米边缘粗糙度）。非常窄的隔离线10-20 nm宽的制造与精细聚焦的电子束由扫描电子显微镜提供。化学放大酚醛清漆树脂基抗蚀剂显示出在纳米织物中不可忽视的纳米边缘粗糙度。为了研究粗糙度的来源，对传统的双组分抗蚀剂系统进行了显微镜比较。使用叠氮化物聚乙烯基苯酚基抗蚀剂和叠氮化物酚醛清漆树脂基抗蚀剂。基于酚醛清漆树脂的抗蚀剂表现出比基于聚乙烯基苯酚的抗蚀剂更粗糙的表面。该结果表明，基础树脂的聚合物结构导致与曝光后烘烤工艺期间的酸扩散相关的化学放大抗蚀剂的纳米边缘粗糙度。
Ultrasmall edge roughness in delineated patterns (nano edge roughness) is investigated in nanostructures made of negative‐type electron beam polymer resists by atomic force microscope measurements. Very narrow isolated lines 10–20 nm wide are fabricated with a finely focused electron beam provided by a scanning electron microscope. A chemical amplification novolak resin‐based resist shows nano edge roughness which cannot be neglected in nanofabrication. To investigate the origin of the roughness, conventional two‐component resist systems are microscopically compared. An azide polyvinylphenol‐based resist and an azide novolak resin‐based resist are used. The novolak resin‐based resist exhibits a rougher surface than the polyvinylphenol‐based one. This result suggests that the polymer structures of the base resins cause nano edge roughness of a chemical amplification resist in connection with the acid diffusion during the post‐exposure bake process.