PRESSURE-DEPENDENCE OF THE ELECTRICAL-RESISTIVITY OF YBCU4AG
PRESSURE-DEPENDENCE OF THE ELECTRICAL-RESISTIVITY OF YBCU4AG
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DOI：
10.1103/physrevb.48.15873
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发表时间：
1993-12-01
影响因子：
3.7
通讯作者：
KAGAYAMA, T
中科院分区：
文献类型：
--
作者：
BAUER, E;HAUSER, R;KAGAYAMA, T
YbCu_4Ag的电阻率ρ（T，p）随压力的变化表明，随着压力的升高，电阻率的最大值显著减小，ρ（T）的T_2项中的系数A显著增大。这表明该化合物的近藤温度T（K）随着压力的增加而降低，稳定了Yb离子的4f13构型。在可压缩Kondo模型的范围内，导出了耦合常数乘以费米能级处的电子态密度的值。
Pressure-dependent masurements of the electrical resistivity, rho(T, p), of YbCu4Ag show a noticeable decrease of the resistivity maximum and a strong increase of the coefficient A in the T2 term of rho(T) when the pressure rises. This indicates that the Kondo temperature T(K) of this compound decreases with increasing pressure, stabilizing the 4f13 ConfigUration of the Yb ion. In the scope of the compressible Kondo model, a value for the coupling constant times the electronic density of states at the Fermi energy has been deduced.