Derived Conduction Band Offset by Photoelectron Yield Spectroscopy and Its Quantitative Number for Efficiency Enhancement of Flexible, Cd-Free, and All-Dry Process Zn1–xMgxO:Al/Zn1–xMgxO/Cu(In,Ga)(S,Se)2 Solar Cells
Derived Conduction Band Offset by Photoelectron Yield Spectroscopy and Its Quantitative Number for Efficiency Enhancement of Flexible, Cd-Free, and All-Dry Process Zn1–xMgxO:Al/Zn1–xMgxO/Cu(In,Ga)(S,Se)2 Solar Cells
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通过光电子产额光谱导出的导带偏移及其定量数值，用于提高柔性、无镉和全干法 Zn1–xMgxO:Al/Zn1–xMgxO/Cu(In,Ga)(S,Se)2 太阳能的效率细胞
DOI：
10.1021/acsaelm.2c00227
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发表时间：
2022
影响因子：
4.7
通讯作者：
T. Minemoto
中科院分区：
文献类型：
--
作者：
Jakapan Chantana;Y. Kawano;Takahito Nishimura;A. Mavlonov;T. Negami;T. Minemoto
利用光电子产额谱估算了柔性、无镉和全干法溅射Zn0.88Mg0.12O：Al/溅射Zn 1-xMgxO缓冲层/Cu（In，Ga）（S，Se）2不锈钢太阳电池的实际导带偏移（CBO）值。公开了缓冲剂的Mg含量从0到0.41的变化产生其带隙（Eg）从3.29到4.14 eV的变化，从而将CIGSSe/Zn 1-xMgxO界面处的CBO从-0.20调整到+0.60 eV。理论上预测，对于高电池性能，导出的CBO值在约-0.18至+0.23 eV的区域内定量优化。然后将优化的定量CBO值应用于真实的器件。因此，在从约+0.11至+0.23 eV（或Zn 1-xMgxO缓冲层的Mg含量从0.16至0.23）的范围内的导出的CBO值下实现了高达约15.0%（最高的16.6%）的高实验转换效率，对应于提高的载流子寿命和载流子复合的减少。另一方面，CBO降低到-0.2 eV（使用ZnO缓冲层）或更低以及CBO增加到+0.23 eV（具有超过0.23的Mg含量的Zn 1-xMgxO缓冲层）分别产生大的悬崖状和尖峰状pn结，从而增加载流子复合并降低电池性能。最后，优化导出的CBO范围的实验揭示的效率提高，这是数值证实。
The actual conduction band offset (CBO) values of flexible, Cd-free, and all-dry process sputtered Zn0.88Mg0.12O:Al/sputtered Zn1–xMgxO buffer/Cu(In,Ga)(S,Se)2solar cells on stainless steel were estimated using photoelectron yield spectroscopy. It is disclosed that the change of Mg content of the buffer from 0 to 0.41 yields the variation of its band gap (Eg) from 3.29 to 4.14 eV, thereby adjusting the CBO at the CIGSSe/Zn1–xMgxO interface from −0.20 to +0.60 eV. It is theoretically predicted that the derived CBO values are quantitatively optimized in a region from approximately −0.18 to +0.23 eV for high cell performance. The optimized and quantitative CBO values were then applied into the real devices. Consequently, high experimental conversion efficiencies up to about 15.0% (the highest one of 16.6%) are realized under the derived CBO values in a range from about +0.11 to +0.23 eV (or Mg content of Zn1–xMgxO buffer from 0.16 to 0.23), corresponding to the improved carrier lifetime and reduction of carrier recombination. On the other hand, the decreased CBO to −0.2 eV (using ZnO buffer) or lower and the increased CBO over +0.23 eV (Zn1–xMgxO buffer with an Mg content of over 0.23) generate large cliff-like and spike-like pn junctions, respectively, thereby increasing carrier recombination and reducing cell performances. Ultimately, the optimized derived CBO range was experimentally disclosed for the efficiency enhancement, which was numerically confirmed.
影响因子：
2.8
作者：
Jackson, Philip;Hariskos, Dimitrios;Powalla, Michael
通讯作者：
Powalla, Michael