High-pressure Raman spectroscopy of diamond anvils to 250 GPa: Method for pressure determination in the multimegabar pressure range
High-pressure Raman spectroscopy of diamond anvils to 250 GPa: Method for pressure determination in the multimegabar pressure range
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DOI：
10.1063/1.1778482
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发表时间：
2004-10-01
影响因子：
3.2
通讯作者：
Kawamura, H
中科院分区：
文献类型：
--
作者：
Akahama, Y;Kawamura, H
在高达250 GPa的压力下，测量了衬垫高压电池用金刚石砧的一阶拉曼光谱。拉曼带的高频边缘对应于晶片表面的拉曼位移，由样品室中高达250 GPa的压力函数表示。这种依赖性几乎与加载条件无关。提出了将压力依赖关系应用于多兆巴压力区域的压力测定。(C) 2004年美国物理研究所。
The first-order Raman spectra of diamond anvils used in a gasketed high-pressure cell have been measured at pressure up to 250 GPa. The high-frequency edge of the Raman band, which corresponds to the Raman shift of the culet face, is represented by a function of pressure in the sample chamber up to 250 GPa. The dependence is almost independent on loading conditions. The application of the pressure dependence for pressure determination up to the multimegabars pressure region is proposed. (C) 2004 American Institute of Physics.