Influence of mechanical strain on the electrical properties of flexible organic thin-film transistors
Influence of mechanical strain on the electrical properties of flexible organic thin-film transistors
复制标题
DOI：
10.1088/0268-1242/26/3/034005
复制
发表时间：
2011-03-01
影响因子：
1.9
通讯作者：
Chung, Ya-Wei
中科院分区：
文献类型：
--
作者：
Chen, Fang-Chung;Chen, Tzung-Da;Chung, Ya-Wei
在这项研究中，我们系统地研究了弯曲的不锈钢基板上制作的柔性有机薄膜晶体管（OTFT）的电性能的影响。我们发现，压缩应变导致的迁移率增加，而拉伸应变降低的电气性能。我们进一步使用传输线方法来提取压缩或拉伸应变下的沟道和寄生电阻。结果表明，在拉伸弯曲条件下，器件的寄生电阻明显增大，这可能是由于源/漏接触的损伤造成的。此外，我们推断，机械应变的影响，并五苯薄膜的晶粒之间的能垒高度，从而导致沟道电阻的变化。总的来说，在金属箔上制造的柔性OTFT表现出高的机械柔性和稳定性。
In this study, we systematically investigated the bending effect on the electrical properties of flexible organic thin-film transistors (OTFTs) fabricated on stainless steel substrates. We found that the compressive strain resulted in an increased mobility, while the tensile strain degraded the electrical performance. We further used a transfer line method to extract the channel and parasitic resistances under either compressive or tensile strain. The results indicated that the parasitic resistance increased apparently under the tensile bending condition, which probably could be attributed to the damage of the source/drain contacts. Additionally, we deduced that mechanical strains influence the energy barrier height between the grains of pentacene thin films, thereby resulting in the variation of channel resistances. Overall, the flexible OTFTs fabricated on the metal foils exhibited high mechanical flexibility and stability.