Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
复制标题
DOI：
10.1063/1.5011327
复制
发表时间：
2018-04-28
影响因子：
3.2
通讯作者：
Coutinho, J.
中科院分区：
文献类型：
--
作者：
Peaker, A. R.;Markevich, V. P.;Coutinho, J.
术语结光谱涵盖了用于探索半导体材料和半导体器件特性的广泛技术。在本教程回顾中，我们描述了用于表征半导体深层缺陷的最广泛使用的结光谱方法，并介绍了当今方法原理所基于的一些早期工作。我们概述了缺陷属性的从头计算，并举例说明如何将密度泛函理论与地层能和标记方法结合使用来指导实验结果的解释。我们回顾了与缺陷相关的载流子的复合、产生和捕获。我们考虑热驱动发射和捕获，并描述深能级瞬态光谱 (DLTS)、高分辨率拉普拉斯 DLTS、导纳光谱和扫描 DLTS 技术。为了研究少数载流子相关过程和宽禁带材料，我们考虑了少数载流子瞬态光谱 (MCTS)、光学 DLTS 和深能级光学瞬态光谱及其许多变体。电容、电流和电导测量能够检测与缺陷相关的载流子交换过程。我们解释如何使用这些方法来理解点缺陷的行为以及电荷态和负 U（哈伯德相关能）行为的确定。我们提供或参考了各种材料的示例，包括 Si、SiGe、GaAs、GaP、GaN、InGaN、InAlN 和 ZnO。由 AIP 出版社出版。
The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO. Published by AIP Publishing.