Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
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射频等离子体化学气相沉积氢化非晶碳薄膜中的离子束诱导效应
DOI：
10.1143/jjap.42.l1021
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
M. Yamaguchi
中科院分区：
文献类型：
--
作者：
K. L. Narayanan;T. Soga;Y. Oshita;M. Yamaguchi
采用射频等离子体化学气相沉积技术，用65 keV的硼离子轰击氢化α-碳薄膜。离子束电流对a-C膜物理性质的影响研究表明，当硼剂量为1×1016 ions/cm ~ 2时，a-C膜的电阻率降低，而光学带隙不受影响。随着注入剂量的增加，薄膜发生结构相变，光学带隙和电阻率减小。这些变化是由于在离子注入过程中产生的缺陷能级和局部加热效应。
Boron ions of 65 keV are bombarded into hydrogenated a-carbon films deposited by radio frequency plasma chemical vapor deposition technique. Ion beam current dependence studies on the physical properties of a-C films for a fixed boron dose of 1×1016 ions/cm2 reveal the reduction in resistivity, whereas the optical gap is found to be unaffected. The structural phase transition accompanied by the reduction in the optical gap and resistivity takes place when the ion dose is increased. These changes are due to the production of defect levels and localized heating effects during the ion implantation process.