Sodium-Mediated Epitaxial Growth of 2D Ultrathin Sb2Se3 Flakes for Broadband Photodetection
Sodium-Mediated Epitaxial Growth of 2D Ultrathin Sb2Se3 Flakes for Broadband Photodetection
复制标题
用于宽带光电检测的二维超薄 Sb2Se3 薄片的钠介导外延生长
DOI：
10.1002/adfm.201909849
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发表时间：
2020-03-01
影响因子：
19
通讯作者：
Zhai, Tianyou
中科院分区：
文献类型：
--
作者：
Zhao, Mei;Su, Jianwei;Zhai, Tianyou
作为VA-VIA族半导体的重要成员，2D Sb_2Se_3由于其优异的光电性能而引起了人们的广泛关注。然而，由于固有的链状晶体结构，可控合成二维平面Sb 2Se 3纳米结构仍然是一个巨大的挑战。在此，首次克服了晶体结构限制，并通过引入钠介导的化学气相沉积（CVD）生长方法实现了2D纳米Sb 2Se 3薄片（薄至1.3 nm）的成功结构演变。二维平面几何结构的形成主要归因于具有最低形成能的（010）面的优先生长。二维Sb_2Se_3薄片的厚度依赖性能带结构显示出从UV到NIR区域（300-1000 nm）的宽吸收带，表明其在宽带光电探测中的潜在应用。引人注目的是，Sb 2Se 3薄片基光电探测器表现出优异的性能，如从UV到NIR区域变化的宽带响应，4320 mA W-1的高响应率，快速响应时间（τ（上升）约为13.16 ms，τ（衰减）约为9.61 ms），以及在532 nm处的2.5的强各向异性比，这意味着在光电子学中的潜在应用前景。
As an important member of group VA-VIA semiconductors, 2D Sb2Se3 has drawn widespread attention thanks to its outstanding optoelectronic properties as compared to the bulk material. However, due to the intrinsic chain-like crystal structure, the controllable synthesis of ultrathin 2D planar Sb2Se3 nanostructures still remains a huge challenge. Herein, for the first time, the crystal structure limitation is overcome and the successful structural evolution of 2D ultrathin Sb2Se3 flakes (as thin as 1.3 nm), by introducing a sodium-mediated chemical vapor deposition (CVD) growth method, is realized. The formation of 2D planar geometry is mainly attributed to the preferential growth of (010) plane with the lowest formation energy. The thickness-dependent band structure of 2D Sb2Se3 flakes shows a wide absorption band from UV to NIR region (300-1000 nm), suggesting its potential application in broadband photodetection. Strikingly, the Sb2Se3 flakes-based photodetector demonstrates excellent performance such as broadband response varying from UV to NIR region, high responsivity of 4320 mA W-1, fast response time (tau(rise) approximate to 13.16 ms and tau(decay) approximate to 9.61 ms), and strong anisotropic ratio of 2.5@ 532 nm, implying promising potential application in optoelectronics.